Adhesive silicon oxynitride film
US11427731B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Oct 7, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/1653
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.