Patent · US Active

Wordline coupling techniques

US11430506B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Rajiv Kumar Sisodia · Bengaluru, IN
Disha Singh · Kanchinakote, IN
Gautam Garg · Kanchinakote, IN
Srinivasan Srinath · Bengaluru, IN
Georgy Jacob · Kanchinakote, IN

Key dates

Filing date	Feb 10, 2020
Grant date	Aug 30, 2022
Priority date	—
Expiry date	Feb 10, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C8/16
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.