Precise plasma control system
US11430635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2020 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Jul 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/56
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.