Power module
US11430721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/40137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Two semiconductor elements and a capacitive element are located at vertices of a triangle. A first shortest path between the semiconductor elements, and a second shortest path and a third shortest path between the capacitive element and the two respective semiconductor elements, satisfy (first shortest path)≥(second shortest path) and ((first shortest path)2+(second shortest path)2)≥(third shortest path)2. A first electrically conductive metal pattern and a second electrically conductive metal pattern each have a thickness that is equal to or larger than two times a depth of a skin through which current flows owing to skin effect generated according to frequency characteristics of current paths having: a first resonance frequency obtained from capacitances and inductances between the semiconductor elements; a second resonance frequency between one of the semiconductor elements and the capacitive element; and a third resonance frequency between another one of the semiconductor elements and the capacitive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.