Patent · US Active

Semiconductor device and method of fabricating the same

US11430779B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 22, 2020
Grant dateAug 30, 2022
Priority date
Expiry dateOct 7, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6757
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.