Hetero-junction phototransistor
US11430905B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2020 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Apr 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
Abstract
A hetero-junction phototransistor with a first layer comprising an InP N buffer and substrate, a second layer comprising an InGaAs N collector on the InP N buffer and substrate, a plurality of InGaAs P bases on the InGaAs N collector layer, and a plurality of InAIAs N emitters is described. Each emitter of the plurality of InAIAs N emitters is on a different base of the plurality of InGaAs P bases. The hetero-junction phototransistor comprises a plurality of InGaAs N+ caps, wherein each cap of the plurality of InGaAs N+ caps is on a different emitter of the plurality of InAIAs N emitters. The hetero-junction phototransistor comprises one or more electrical contacts. Each of the one or more electrical contacts is on a different cap of the plurality of InGaAs N+ caps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.