LED chip, LED light emitting substrate, display device and control method thereof
US11430913B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Dec 20, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2300/0452
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.