Method of manufacturing oxide semiconductor
US11430955B2 · kind B2 · utility
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3References
13Claims
0Family size
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Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Jul 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an oxide semiconductor, includes impregnating a substrate in a solution containing a metal precursor and hydroxyl ions, and forming a metal oxide on the substrate by applying a voltage to the solution. The solution includes a surfactant, and the direction of crystal growth of the metal oxide is controllable based on the surfactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.