Ultrasonic sensor system with higher-frequency and lower-frequency areas
US11436857B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Aug 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N39/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus may include an ultrasonic sensor system having an ultrasonic transceiver layer, a thin-film transistor (TFT) layer and a frequency-differentiating layer. In some examples, the frequency-differentiating layer may include a first frequency-differentiating layer area corresponding to a lower-frequency area of the ultrasonic sensor system. The first frequency-differentiating layer area may include a first material having a first acoustic impedance. In some such examples, the frequency-differentiating layer may include a second frequency-differentiating layer area corresponding to a higher-frequency area of the ultrasonic sensor system. The second frequency-differentiating layer area may include a second material having a second acoustic impedance. The first acoustic impedance may, for example, be higher than the second acoustic impedance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.