Stack capacitor, a flash memory device and a manufacturing method thereof

US11437387B2 · kind B2 · utility

Assignee

• Shanghai Huali Microelectronics Corporation · CN

Inventors

• Zhi Tian · Shanghai, CN
• Juanjuan Li · Shanghai, CN
• Hua Shao · Nanhu, CN
• Haoyu Chen · Hefei, CN

Key dates

• Filing date: Mar 26, 2021
• Grant date: Sep 6, 2022
• Expiry date: Mar 26, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

The present disclosure provides a stack capacitor, a flash memory device, and a manufacturing method thereof. The stack capacitor of the flash memory device has a a memory transistor structure which at least comprises a substrate, and a tunneling oxide layer, a floating gate layer, an interlayer dielectric layer and a control gate layer which are sequentially stacked on the substrate, the interlayer dielectric layer of the stack capacitor comprises a first oxide layer and a nitride layer; the stack capacitor further comprises a first contact leading out of the control gate layer and a second contact leading out of the floating gate layer. The capacitance per unit area of the stack capacitor provided by the disclosure is effectively improved, and the size of the transistor device is reduced. The manufacturing method according to the disclosure does not add any additional photomask than a conventional process flow.