Display apparatus having an oxide semiconductor pattern
US11437407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.