Semiconductor device with transmissive layer and manufacturing method thereof
US11437552B2 · kind B2 · utility
1Cited by
241References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Nov 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.