Non-volatile resistive-switching memory containing halide perovskite material and method for fabricating the same
US11437574B2 · kind B2 · utility
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Key dates
| Filing date | Jan 4, 2019 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Jan 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A′)2An−1BnX3n+1,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.