Surface-emitting semiconductor laser
US11437783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2018 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Jul 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting semiconductor laser includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer. The active layer and the second-conductivity-type layer are electrically connected in a current constriction layer through an opening. The surface-emitting semiconductor laser further includes an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer. In the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.