Bis(diazadiene)cobalt compounds, method of making and method of use thereof
US11440929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jun 3, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are bis(diazadiene)cobalt compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicates; silicon, silicon oxide and silicon nitride. Alkylated diazadiene ligands are used to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.