Cleaning solution for removing dry etching residue and method for manufacturing semiconductor substrate using same
US11441109B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | May 5, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.