Patent · US Active

Superconducting nanowire single photon detector and method of fabrication thereof

US11441941B2 · kind B2 · utility

1Cited by
77References
17Claims
0Family size

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Key dates

Filing dateApr 15, 2021
Grant dateSep 13, 2022
Priority date
Expiry dateApr 15, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E40/60
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.