Superconducting nanowire single photon detector and method of fabrication thereof
US11441941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E40/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.