Method and apparatus for calculating kink current of SOI device
US11442097B2 · kind B2 · utility
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Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.