Magnetic junction memory device and writing method thereof
US11443791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Apr 14, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.