Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

US11443942B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Neeraj Nepal · Salem, US
• Charles R. Eddy, Jr. · Columbia, US
• Nadeemullah A. Mahadik · Springfield, US
• Syed B. Qadri · Fairfax Station, US
• Michael J. Mehl · Davidsonville, US

Key dates

• Filing date: Sep 7, 2017
• Grant date: Sep 13, 2022
• Expiry date: Sep 7, 2037

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/403
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.