Display substrate having gate extension portion protruding from gate electrode of first transistor, display device and manufacturing method the same thereof
US11444132B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 29, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jan 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A display substrate, a manufacturing method thereof and a display device are provided. The display substrate includes a base substrate and sub-pixels on the base substrate. At least one sub-pixel includes a first transistor, a second transistor, a third transistor, and a storage capacitor. The display substrate further includes an extension portion protruding from the gate electrode of the first transistor, and the extension portion is extended from the gate electrode of the first transistor in the second direction; the extension portion is at least partially overlapped with the first electrode of the second transistor in a direction perpendicular to the base substrate and is electrically connected with the first electrode of the second transistor; in the first direction, the extension portion has a second side closest to the second capacitor electrode, and the second side is recessed in a direction away from the second capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.