Patent · US Active

Fin semiconductor device and method for making the same

US11444182B2 · kind B2 · utility

0Cited by

0References

9Claims

0Family size

Assignee

Shanghai Huali Integrated Circuit Corporation · CN

Inventors

Qiuming Huang · Shanghai, CN
Jun Tan · Shanghai, CN
Qiang Yan · Shanghai, CN

Key dates

Filing date	May 21, 2021
Grant date	Sep 13, 2022
Priority date	—
Expiry date	May 21, 2041

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y10/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A manufacturing method of a fin semiconductor device is disclosed. The method includes: providing a substrate; etching the substrate the first time to form a fin channel structure which protrudes from the substrate; forming a protective oxide layer on two sidewalls and the top surface of the fin channel structure; etching a the second time to form the base part of the fin channel structure, wherein the base part is not covered by the protective layer; oxidizing the base part of the fin channel, when the upper part of the fin channel is blocked from oxidation by the protective layer; removing both the protective layer and the oxidized base part of the fin channel structure, so that the upper part of the fin channel structure is suspended over the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.