Light-emitting semiconductor component

US11444224B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Ulrich Streppel · Regensburg, DE
• Hailing Cui · Regensburg, DE
• Désirée Queren · Neutraubling, DE
• Dajana Durach · Aachen, DE

Key dates

• Filing date: Jan 25, 2019
• Grant date: Sep 13, 2022
• Expiry date: May 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.