Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
US11444588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Oct 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/387
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.