Screening method and apparatus for detecting deep trench isolation and SOI defects
US11448690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A testing method and apparatus is disclosed for testing an integrated circuit device (100) which has a dedicated ground bias pad (121) connected across a high voltage electrostatic discharge clamp circuit (123) to a well-driving ground pad (122) by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate (101) while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (103), where the first and second voltage create a stressing voltage across a buried insulator layer (102, 105) in the integrated circuit device so that a screening test can be conducted to screen for a defect (106) in the buried insulator layer by measuring a leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.