Patent · US Active

Composite seed structure to improve PMA for perpendicular magnetic pinning

US11450466B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Inventors

Yimin Guo · San Jose, US
Rongfu Xiao · Dublin, US
Jun Chen · Taichung, TW

Key dates

Filing date	Aug 19, 2020
Grant date	Sep 20, 2022
Priority date	—
Expiry date	Jan 23, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/3236
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.