Patent · US Active

Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same

US11450467B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Inventors

Yimin Guo · San Jose, US
Rongfu Xiao · Dublin, US
Jun Chen · Taichung, TW

Key dates

Filing date	Nov 25, 2020
Grant date	Sep 20, 2022
Priority date	—
Expiry date	Jun 11, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/3272
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.