Semiconductor device for increasing capacitance effective area and effective capacitance value
US11450667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2019 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.