Patent · US Active

Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation

US11450672B2 · kind B2 · utility

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1References

18Claims

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Assignee

Intel Corporation · US

Inventors

Charles Augustine · Hillsboro, US
Somnath Paul · Milpitas, US
Muhammad M. Khellah · Lake Oswego, US
Chen Koren · Hadera, IL

Key dates

Filing date	Apr 27, 2020
Grant date	Sep 20, 2022
Priority date	—
Expiry date	Apr 27, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/062
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.