Image sensor and method of manufacturing same
US11450704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Dec 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.