Metal-oxide semiconductor module and light-emitting diode display device including the same
US11450708B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/3303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.