Semiconductor device and fabrication method for semiconductor device
US11450734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jun 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.