Electrode structure for vertical group III-V device

US11450749B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yao-Chung Chang · Hsinchu, TW
• Chun Lin Tsai · Baoshan, TW
• Ru-Yi Su · Kouhu, TW
• Wei Wang · Beijing, CN
• Wei-Chen Yang · Hsinchu, TW

Key dates

• Filing date: May 27, 2020
• Grant date: Sep 20, 2022
• Expiry date: Jul 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Various embodiments of the present disclosure are directed towards a semiconductor structure including a buffer layer disposed between an active layer and a substrate. The active layer overlies the substrate. The substrate and the buffer layer include a plurality of pillar structures that extend vertically from a bottom surface of the active layer in a direction away from the active layer. A top electrode overlies an upper surface of the active layer. A bottom electrode underlies the substrate. The bottom electrode includes a conductive body and a plurality of conductive structures that respectively extend continuously from the conductive body, along sidewalls of the pillar structures, to a lower surface of the active layer.