Manufacturing method of semiconductor chip
US11450756B2 · kind B2 · utility
1Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Nov 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.