Quantum structures using aperture channel tunneling through depletion region
US11450760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jan 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Novel and useful quantum structures having a continuous fully depleted well with control gates that form two quantum dot on either side of the gate. Appropriate potentials are applied to the well and control gate to control quantum tunneling between quantum dots thereby enabling quantum operations to occur. Qubits are realized by modulating applied gate potential to control tunneling through a quantum transport path between two or more sections of the well. Complex structures with a higher number of quantum dots per continuous well and a larger number of wells can be fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. An injection device permits tunneling of a single quantum particle from a classic side to a quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.