Quantum dot devices with diodes for electrostatic discharge protection
US11450765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum dot device is disclosed that includes a fin and a gate above the fin. The fin may extend away from a base and include a quantum well stack in which one or more quantum dots may be formed during operation of the quantum dot device. The gate may include a gate electrode material having a first portion and a second portion, where the first portion is above the quantum well stack and the second portion is a portion that is not above the quantum well stack and is separated from the base by an insulating material. The quantum dot device may further include a metal structure between the second portion of the gate electrode material and the base, forming a portion of a diode provided in series with the gate, which diode may provide at least some ESD protection for the quantum dot device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.