Thin film transistor, method of fabricating thin film transistor, and display apparatus having thin film transistor
US11450773B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 5, 2019 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Nov 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A thin film transistor is provided. The thin film transistor includes a base substrate; a first target layer on the base substrate; a first insulating layer on a side of the first target layer away from the base substrate; an intermediate layer on a side of the first insulating layer away from the first target layer; a second insulating layer on a side of the intermediate layer away from the first insulating layer; and a second target layer on a side of the second insulating layer away from the intermediate layer. The first target layer is electrically connected to the second target layer. The intermediate layer is one of a gate electrode and an active layer, and the first target layer and the second target layer together constitute another one of the gate electrode and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.