Micron-scale monocrystal film
US11450799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jun 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8542
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.