Fabricating correlated electron material (CEM) devices
US11450804B2 · kind B2 · utility
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42References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jul 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.