Radio frequency switch circuitry
US11451226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Sep 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/693
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Radio frequency (RF) switch circuitry is disclosed having a field-effect transistor with a drain, a source, and a gate, wherein the gate is driven by switch driver circuitry having a control terminal for receiving switch-on and switch-off signals and a driver terminal for outputting on-state and off-state voltages. The switch driver circuitry is configured to respond to the switch-on signal by generating the on-state voltage that when applied to the gate allows an RF signal to pass between the drain and the source and respond to the switch-off signal by generating the off-state voltage that when applied to the gate blocks the RF signal from passing between the drain and the source. A low-pass filter has an inductor coupled between the gate and the driver terminal, wherein a direct current (DC) path between the gate and the driver terminal has a total DC resistance of no more than 100 Ω.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.