Patent · US Active

Control circuitry for power semiconductor switches using control signal feedback

US11451227B2 · kind B2 · utility

0Cited by
5References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2020
Grant dateSep 20, 2022
Priority date
Expiry dateApr 30, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8503
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An apparatus includes a power semiconductor switch, a driver circuit configured to drive a control terminal of the power semiconductor switch, and a control circuit configured to apply a control signal to the driver circuit responsive to a comparison of a reference voltage to a voltage at the control terminal of the semiconductor switch. In some embodiments, the power semiconductor switch may include a field effect transistor (FET), such as a wide bandgap silicon carbide (SiC) MOSFET. The control terminal may include a gate terminal of the FET, and the voltage at the control terminal may include a gate voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.