Control circuitry for power semiconductor switches using control signal feedback
US11451227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Apr 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a power semiconductor switch, a driver circuit configured to drive a control terminal of the power semiconductor switch, and a control circuit configured to apply a control signal to the driver circuit responsive to a comparison of a reference voltage to a voltage at the control terminal of the semiconductor switch. In some embodiments, the power semiconductor switch may include a field effect transistor (FET), such as a wide bandgap silicon carbide (SiC) MOSFET. The control terminal may include a gate terminal of the FET, and the voltage at the control terminal may include a gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.