Image sensor using a global shutter and method for controlling same
US11451730B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jun 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/709
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.