Formation of high quality alane
US11453585B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jul 30, 2019 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Dec 29, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Methods for forming alane are described. The method includes addition of toluene at a temperature above the crystallization temperature of alane to a lower temperature solution that includes alane adduct, ether, and toluene. Upon the addition, a crystallization mixture is formed that is at or near the crystallization temperature of alane. The alane of the mixture crystallizes over a period of time to form a high purity alane polymorph.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.