Dielectric thin film, dielectric element and electronic circuit board
US11453615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/783
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.