Narrow band emitting SiAlON phosphor
US11453821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2020 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Dec 2, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/60
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.