Semiconductor device and method for manufacturing the same

US11456218B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Guilei Wang · Beijing, CN
• Henry H. Radamson · Märsta, SE
• Zhenzhen Kong · Beijing, CN
• Junjie Li · Hangzhou City, CN
• Jinbiao Liu · Shanghai, CN
• Junfeng Li · Nanhu, CN
• Huaxiang Yin · Beijing, CN

Key dates

• Filing date: Aug 27, 2020
• Grant date: Sep 27, 2022
• Expiry date: Dec 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A semiconductor device and a method for manufacturing the semiconductor device. Multiple stacks and an isolation structure among the multiple stacks are formed on a substrate. Each stack includes a first doping layer, a channel layer and a second doping layer. For each stack, the channel layer is laterally etched from at least one sidewall of said stack to form a cavity located between the first doping layer and the second doping layer, and a gate dielectric layer and a gate layer are formed in the cavity. A first sidewall of each stack is contact with the isolation structure, and the at least one sidewall does not include the first side wall. Costly high-precision etching is not necessary, and therefore a device with a small size and a high performance can be achieved with a simple process and a low cost. Diversified device structures can be provided on requirement.