Light emitting diode (LED) chip and manufacturing method and light emitting method thereof

US11456399B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Zhendong Wei · Xiamen, CN
• Junxian Li · Zhejiang, CN
• Qilong WU · Longbeilingcun, CN
• Yingce LIU · Xiamen, CN
• Hongyi Zhou · Niskayuna, US

Key dates

• Filing date: Jul 30, 2018
• Grant date: Sep 27, 2022
• Expiry date: Feb 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.