Variable resistance memory device and method of manufacturing the same
US11456414B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 20, 2019 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Jul 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A method of manufacturing a variable resistance memory device may include: forming a memory cell including a variable resistance pattern on a substrate; performing a first process to deposit a first protective layer covering the memory cell; and performing a second process to deposit a second protective layer on the first protective layer. The first process and the second process may use the same source material and the same nitrogen reaction material, and a nitrogen content in the first protective layer may be less than a nitrogen content in the second protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.