Modified distribution of memory device states
US11462279B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2021 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | May 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Storage devices include a memory array comprised of a plurality of memory devices. These memory devices are programmed with a modified distribution across the available memory states within the devices. The modified distribution of memory states attempts to minimize the use of memory states that are susceptible to negative effects. These negative effects can include read and write disturbs as well as data retention errors. Often, these negative effects occur on memory states on the lower and upper states within the voltage threshold range of the memory device. The distribution of memory states can be modified though the use of a modified randomization seed configured to change the probabilities of programming of each page within the memory device. This modification of the randomization seed can yield desired distribution of memory device states that are configured to reduce exposure to negative effects thus prolonging the overall lifespan of the storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.