Suboxide molecular-beam epitaxy and related structures

US11462402B2 · kind B2 · utility

Assignees

• Cornell University · IT
• The Penn State Research Foundation · US

Inventors

• Patrick Vogt · Ithaca, US
• Darrell G. Schlom · Thalwil, CH
• Felix V. E. Hensling · Ithaca, US
• Kathy Azizie · Plainfield, US
• Zi-Kui Liu · State College, US
• Brandon J. Bocklund · State College, US
• Shun-Li Shang · State College, US

Key dates

• Filing date: Oct 21, 2020
• Grant date: Oct 4, 2022
• Expiry date: Oct 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/80
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (Ga2O3) film, a molecular beam including a suboxide of gallium (Ga2O) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.